Raman studies in CdS thin films in the evolution from cubic to hexagonal phase
1997; Elsevier BV; Volume: 104; Issue: 3 Linguagem: Inglês
10.1016/s0038-1098(97)00080-x
ISSN1879-2766
AutoresO. Zelaya-Ángel, Fray de Landa Castillo-Alvarado, J Avendaño-López, A. Escamilla‐Esquivel, G. Contreras‐Puente, R. Lozada‐Morales, G. Torres‐Delgado,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoCdS polycrystalline thin films prepared onto glass substrates by the chemical bath deposition method at 80°C showed cubic crystalline structure (β-CdS). Upon thermal annealing in Ar + S2 flux at different temperatures in the range 200–510°C, the crystalline structure evolution of layers from the cubic modification (as-grown sample) to hexagonal phase (annealed at highest temperature samples) has been observed. At around 300°C the critical point of the phase transition has been experimentally determined to occur. Raman spectroscopy measurements were carried out at room temperature for as-grown and annealed layers. The A1(LO) + E1(LO) modes at 305 cm−1 and replicas appear for as-grown and annealed samples. The E1(TO) and the A1(TO) modes were also observed. A classic simple approach is proposed in order to explain the presence of the TO modes.
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