Cryogenic etching of nano-scale silicon trenches with resist masks
2010; Elsevier BV; Volume: 88; Issue: 8 Linguagem: Inglês
10.1016/j.mee.2010.11.055
ISSN1873-5568
AutoresY. Wu, Deidre Olynick, Andy Goodyear, Christophe Péroz, Scott Dhuey, Xiaogan Liang, Stefano Cabrini,
Tópico(s)Nanofabrication and Lithography Techniques
ResumoCryogenic silicon etching using SF6–O2 at the sub-50 nm scale has been developed for nano-electromechanical systems (NEMS) and nano-photonics systems where high aspect ratio trenches are desired. It was found that the SF6–O2 chemistry at cryogenic temperatures (−100 to −130 °C) provides the best combination of etch rate, selectivity, and profile control for the smallest trenches etched. The profile can be well controlled with aspect ratios on the order of 8:1 for 20 nm wide trenches. The various etch parameter trends will be discussed along with methods to achieve the optimal profiles and etch rates.
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