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Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi 2 Balls Embedded in Si Crystals

1998; Institute of Physics; Volume: 37; Issue: 12B Linguagem: Inglês

10.1143/jjap.37.l1513

1347-4065

Takashi Suemasu, Tetsuo Fujii, Yuusuke Iikura Yuusuke Iikura, Ken'ichiro Takakura Ken'ichiro Takakura, Fumio Hasegawa,

Silicon and Solar Cell Technologies

We report on the photoluminescence at around 1.5 µm from β-FeSi 2 balls grown by reactive deposition epitaxy (RDE) and embedded in Si crystals for the first time. The photoluminescence spectra depended on the size of the β-FeSi 2 ball. We observed photoluminescence from the sample containing about 100-nm-diameter β-FeSi 2 balls, but not from the samples containing balls 50–70 nm and 150–200 nm in diameter. This is because of the existence of nonradiative recombination centers due to a mixture of metallic α-FeSi 2 for the former case, and of many dislocations induced by β-FeSi 2 balls for the latter case.