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Thermal Conductivity of β‐Si 3 N 4 : II, Effect of Lattice Oxygen

2000; Wiley; Volume: 83; Issue: 8 Linguagem: Inglês

10.1111/j.1151-2916.2000.tb01501.x

1551-2916

Mikito Kitayama, Kiyoshi Hirao, A. Tsuge, Koji Watari, Motohiro Toriyama, Shuzo Kanzaki,

Diamond and Carbon-based Materials Research

Dense β‐Si 3 N 4 with various Y 2 O 3 /SiO 2 additive ratios were fabricated by hot pressing and subsequent annealing. The thermal conductivity of the sintered bodies increased as the Y 2 O 3 /SiO 2 ratio increased. The oxygen contents in the β‐Si 3 N 4 crystal lattice of these samples were determined using hot‐gas extraction and electron spin resonance techniques. A good correlation between the lattice oxygen content and the thermal resistivity was observed. The relationship between the microstructure, grain‐boundary phase, lattice oxygen content, and thermal conductivity of β‐Si 3 N 4 that was sintered at various Y 2 O 3 /SiO 2 additive ratios has been clarified.