Formation, characterization, and properties of a new boron-carbon-nitrogen crystal
1999; American Institute of Physics; Volume: 86; Issue: 5 Linguagem: Inglês
10.1063/1.371077
ISSN1520-8850
Autores Tópico(s)Metal and Thin Film Mechanics
ResumoAmorphous boron-carbon-nitrogen (BCN) powders were produced by mechanically milling a mixture of hexagonal boron nitride (h-BN) and graphite powders for 120 h in an argon atmosphere. By annealing the amorphous BCN powders isothermally under 4 GPa at temperatures above 880 K, a new B–C–N crystal with a tetragonal structure was obtained. Its lattice constants decrease with the increasing annealing temperature and are a=1.685 nm and c=0.537 nm, respectively at an annealing temperature of 1170 K. The conductivity measurement suggests the new B–C–N phase is a semiconductor with a very small band gap and the band gap changes depending on the temperature in the temperatures between room temperature and 840 K.
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