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Different Hydrogen Passivation Mechanisms between Low-Temperature and High-Temperature Poly-Si TFT's

1995; Institute of Physics; Volume: 34; Issue: 2S Linguagem: Inglês

10.1143/jjap.34.719

1347-4065

Yong‐Sang Kim, Kwon‐Young Choi, Min‐Koo Han,

Silicon Nanostructures and Photoluminescence

We have investigated the different hydrogen passivation effects on low-temperature (LT) processed and high-temperature (HT) processed poly-Si thin-film transistors (TFT's). The hydrogen passivation on LT poly-Si TFT's results in the increase of the field-effect mobility and the decrease of the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in HT poly-Si TFT's. The effective trap-state densities of LT poly-Si TFT before and after 5 h of hydrogenation are estimated at about 4×10 12 /cm 2 and 1.5×10 12 /cm 2 , while those of HT poly-Si TFT are about 1.5×10 12 /cm 2 and 1.2×10 12 /cm 2 , respectively. The activation energy of HT poly-Si TFT has been increased significantly in the off state with hydrogen passivation, whereas that of LT device has been decreased remarkably in the on state.