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Pulse height defect of low energy ions in surface barrier detectors

1991; Elsevier BV; Volume: 56-57; Linguagem: Inglês

10.1016/0168-583x(91)95075-o

1872-9584

H. Funaki, M. Mashimo, Masashi Shimizu, Y. Oguri, E. Arai,

Radiation Effects in Electronics

Data of pulse height defects (PHD) of silicon surface barrier detectors (SBD) are very important for the particle mass assignment by means of TOF measurements. We have measured pulse height signals from SBD for protons (control) and five heavy ion species (16O, 19F, 28Si, 35Cl, 81Br) in the incident energy range of 2–8 MeV. The experimental data have been best-fitted to a proposed empirical formula which reproduces PHD values for all particles with A = 16–80 in this energy range. The experimental results are discussed by comparing them with defect values calculated by using the TRIM code and with values calculated by the empirical formula proposed by Kaufman.