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Orientation Control of Metalorganic Chemical Vapor Deposition-Bi 4 Ti 3 O 12 Thin Film by Sequential Source Gas Supply Method

2000; Institute of Physics; Volume: 39; Issue: 9R Linguagem: Inglês

10.1143/jjap.39.5211

1347-4065

Takayuki Watanabe, Hiroshi Funakubo,

Photorefractive and Nonlinear Optics

C -axis-oriented Bi 4 Ti 3 O 12 thin films were prepared on (111)Pt/Ti/SiO 2 /Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi 4 Ti 3 O 12 along the c -axis. The X-ray diffraction intensities of Bi 4 Ti 3 O 12 (006) and Bi 4 Ti 3 O 12 (117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c -axis-oriented Bi 4 Ti 3 O 12 film, and the supply corresponding to a half unit cell per sequence showed high c -axis orientation.