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Effect of the dangling-bond charge on the ambipolar diffusion length in a-Si: H

1991; Taylor & Francis; Volume: 63; Issue: 6 Linguagem: Inglês

10.1080/09500839108206376

1362-3036

É. Sauvain, J. Hubin, A. Shah, P. Pipoz,

CCD and CMOS Imaging Sensors

Abstract The light intensity dependence of the photoconductivity (σph), of the ambipolar diffusion length (L amb) and of the ratio of the effective mobilities (b = μn∗/μp∗) has been measured on undoped a-Si: H. L amb and b have been measured using the steady-state photocarrier grating (SSPG) method. The kinetics of the light-induced degradation (Staebler-Wronski effect) of a typical undoped hydrogenated amorphous silicon (a-Si: H) film is presented: it illustrates that the measured value of L amb varies in a quite different manner with deep defect density that σph. All these results can be explained by incorporating the effect of the dangling-bond charge into the model (used hitherto), that included only the effect of the charge trapped in the bandtails.