Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation
1990; American Institute of Physics; Volume: 57; Issue: 11 Linguagem: Inglês
10.1063/1.103539
ISSN1520-8842
AutoresThomas H. Wood, J. Pastalan, C.A. Burrus, Bart Johnson, B.I. Miller, J. L. de Miguel, U. Koren, M.G. Young,
Tópico(s)Spectroscopy and Quantum Chemical Studies
ResumoWe observe saturation in the electroabsorption of InGaAs/InP multiple quantum wells (MQWs) at high optical intensity. Contrary to the mechanism for zero-field MQWs, we find that saturation occurs due to the presence of trapped photogenerated holes that screen the MQWs from the applied electric field. By carefully measuring the absorption coefficient of the wells and the emission time for holes, we are able to fit the observed electroabsorption saturation with no adjustable parameters.
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