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Optimization of Plasma Processing for Silicon-Gate FET Manufacturing Applications

1982; IBM; Volume: 26; Issue: 5 Linguagem: Inglês

10.1147/rd.265.0580

2151-8556

A. S. Bergendahl, Sacha Bergeron, D. Harmon,

Integrated Circuits and Semiconductor Failure Analysis

The development and implementation of plasma processing techniques for silicon-gate FET manufacturing applications is described. Process requirements are discussed for the stripping of photoresist and the isotropic etching of thin films. A systematic approach for the optimization of these processes, involving the use of statistically designed multiparametric experimentation (MPE), is presented. This approach, in combination with the use of response-surface analysis techniques, is illustrated by examples of its application to typical processing problems. In addition, the multiparametric optimization of anisotropic etching is presented for potential plasma processing enhancements.