Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes
2011; Royal Society of Chemistry; Volume: 21; Issue: 44 Linguagem: Inglês
10.1039/c1jm13640b
ISSN1364-5501
AutoresDae‐Woo Jeon, Won Mook Choi, Hyeon‐Jin Shin, Seon-Mi Yoon, Jae‐Young Choi, Lee‐Woon Jang, In‐Hwan Lee,
Tópico(s)Graphene research and applications
ResumoInGaN/GaN nanopillar light-emitting diodes (LEDs) were fabricated using a highly homogeneous multilayer graphene (h-MLG) electrode. Four layers of h-MLG were prepared homogeneously using chemical vapor deposition and layer-by-layer transfer methods. The h-MLG exhibited excellent optical, structural and electrical properties for use as an electrode in the LEDs. The h-MLG was applied as a transparent top electrode by suspending only on the tip of nanopillar LEDs. The current-driven InGaN/GaN nanopillar LED with the h-MLG electrode was successfully operated at a high current injection and exhibited bright electroluminescence.
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