Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation
1998; Elsevier BV; Volume: 123-124; Linguagem: Inglês
10.1016/s0169-4332(97)00576-x
ISSN1873-5584
AutoresTamotsu Hashizume, Kengo Ikeya, Morimichi Mutoh, Hideki Hasegawa,
Tópico(s)Semiconductor materials and devices
ResumoGaAs surfaces were successfully passivated by utilizing an ultrathin Si3N4/Si interface control layer (ICL) formed by molecular beam epitaxy (MBE) and in situ electron-cyclotron-resonance (ECR) plasma-assisted nitridation. Detailed X-ray photoelectron spectroscopy (XPS) analysis showed that optimization of the ECR plasma process led to the realization of well-defined Si3N4/Si double-layer structure without change in chemical status of GaAs surface. As compared with the clean MBE surface, surface Fermi level pinning became weaker and the band-edge photoluminescence (PL) intensity became larger after passivation.
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