Broadband terahertz imaging with highly sensitive silicon CMOS detectors
2011; Optica Publishing Group; Volume: 19; Issue: 8 Linguagem: Inglês
10.1364/oe.19.007827
ISSN1094-4087
AutoresF. Schuster, Dominique Coquillat, H. Videlier, M. Sakowicz, F. Teppe, Laurent Dussopt, B. Giffard, T. Skotnicki, W. Knap,
Tópico(s)Photonic and Optical Devices
ResumoThis paper investigates terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology. We show that the detectors consisting of a nMOS field effect transistor as rectifying element and an integrated bow-tie coupling antenna achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz(0.5) in the important atmospheric window around 300 GHz and at room temperature. We demonstrate furthermore that the same detectors are efficient for imaging in a very wide frequency range from ~0.27 THz up to 1.05 THz. These results pave the way towards high sensitivity focal plane arrays in silicon for terahertz imaging.
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