Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect
2007; Elsevier BV; Volume: 372; Issue: 10 Linguagem: Inglês
10.1016/j.physleta.2007.10.021
ISSN1873-2429
AutoresChun‐Nan Chen, Wei-Long Su, Jih-Chen Chiang, Ikai Lo, Wan‐Tsang Wang, Meng-En Lee,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoAbstract This study investigates the optical anisotropy spectrum in the R-plane (i.e., the [ 10 1 ¯ 2 ] -oriented layer plane) of GaN/Al0.2Ga0.8N quantum wells of different widths. The optical matrix elements in the wurtzite quantum wells are calculated using the k ⋅ p finite difference scheme. The calculations show that the valence band mixing effect produces giant in-plane optical anisotropy in [ 10 1 ¯ 2 ] -oriented GaN/Al0.2Ga0.8N quantum wells with a narrow width. The nature of the in-plane optical anisotropy is found to be dependent on the well width. Specifically, it is found that the anisotropy changes from x ′ -polarization to y ′ -polarization as the well width increases.
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