Simultaneous growth mechanism of intermediate silicides in MoSi2/Mo system
2001; Elsevier BV; Volume: 148; Issue: 2-3 Linguagem: Inglês
10.1016/s0257-8972(01)01354-8
ISSN1879-3347
AutoresJin‐Kook Yoon, Gyeung-Ho Kim, Ji Young Byun, Jae-Soo Kim, Chong‐Sool Choi,
Tópico(s)MXene and MAX Phase Materials
ResumoAbstract The simultaneous growth mechanism of the Mo 5 Si 3 and Mo 3 Si layers in the MoSi 2 /Mo diffusion couple was investigated using optical microscopy (OM), scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). The MoSi 2 /Mo diffusion couple was made by chemical vapor deposition (CVD) of Si on the Mo substrate at 1100°C for 5 h and annealed at temperatures of 1250 and 1600°C, respectively, in an argon atmosphere. Simultaneous parabolic growth of the Mo 5 Si 3 and Mo 3 Si layers was observed at an early annealing stage of the MoSi 2 /Mo diffusion couple. From the location of Kirkendall voids observed in the Mo 5 Si 3 layer and the change of columnar diameter and texture of Mo 5 Si 3 grains, simultaneous growth mechanism of the Mo 5 Si 3 and Mo 3 Si layers was found. The phase transformation of MoSi 2 into Mo 5 Si 3 and Si contributed to approximately 30% of the total thickness of Mo 5 Si 3 layer, but the remainder of Mo 5 Si 3 layer and the Mo 3 Si layer with small thickness were formed by the diffusion reaction of the released Si and Mo substrate. These results indicated that Si was the only diffusing element in the Mo 5 Si 3 phase.
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