Artigo Revisado por pares

Reconstruction of electron trajectories in high-resolution Si devices for advanced Compton imaging

2011; Elsevier BV; Volume: 652; Issue: 1 Linguagem: Inglês

10.1016/j.nima.2011.01.133

ISSN

1872-9576

Autores

Brian Plimley, Daniel H. Chivers, Amy Coffer, Tim Aucott, Wenni Wang, K. Vetter,

Tópico(s)

Radiation Detection and Scintillator Technologies

Resumo

Compton imaging has been demonstrated to provide excellent detection and localization capabilities in the search and characterization of radiation sources. However, the currently achievable sensitivity is limited by the Compton cone, which is backprojected. By measuring the initial trajectory of the Compton electron, the cone may be reduced to a cone segment with a corresponding increase in sensitivity. We have demonstrated the ability to measure electron trajectories (tracks) in thick (650μm), fully depleted silicon scientific CCDs, with a spatial resolution of 10μm in 2D. These measured tracks have been used to benchmark simulations of electron physics and detector response. We have developed an electron track algorithm to measure the initial electron direction in 3D from the CCD image, and utilized the modeled electron tracks to evaluate the angular resolution as a function of energy and initial direction for electrons up to ∼500keV. For electrons above 150 keV and 30° out-of-plane, we have achieved an in-plane angular uncertainty of σα≲40∘, and an out-of-plane uncertainty of σβ≲30∘ in each hemisphere.

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