Formation of BaSi2 heterojunction solar cells using transparent MoO x hole transport layers
2015; American Institute of Physics; Volume: 106; Issue: 12 Linguagem: Inglês
10.1063/1.4916348
ISSN1520-8842
AutoresWenjie Du, R. Takabe, Masako Baba, Hiroki Takeuchi, Kosuke O. Hara, Kaoru Toko, Noritaka Usami, Takashi Suemasu,
Tópico(s)Semiconductor materials and devices
ResumoHeterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of −1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.
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