Continuous-Wave, Room-Temperature Operation of 2-µm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates
2009; Institute of Physics; Volume: 2; Issue: 11 Linguagem: Inglês
10.1143/apex.2.112102
ISSN1882-0786
AutoresThomas J. Rotter, Jun Tatebayashi, Pradeep Senanayake, Ganesh Balakrishnan, M. Rattunde, J. Wagner, J. Hader, Jerome V. Moloney, S. W. Koch, L. R. Dawson, Diana L. Huffaker,
Tópico(s)Photonic and Optical Devices
ResumoWe report on continuous-wave, room-temperature operation at 2.014 µm of Sb-based optically-pumped vertically-external-cavity surface-emitting lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) growth mode. The IMF is characterized by a periodic array of 90° misfit dislocation and enables the relaxed GaSb growth with a low dislocation density on lattice-mismatched GaAs after the growth of only a few monolayers of GaSb. A maximum output power of >100 mW is obtained at -5 °C.
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