A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm 2 /V·s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors
2014; American Chemical Society; Volume: 136; Issue: 26 Linguagem: Inglês
10.1021/ja504537v
ISSN1943-2984
AutoresGyoungsik Kim, Seok‐Ju Kang, Gitish K. Dutta, Young‐Kyu Han, Tae Joo Shin, Yong‐Young Noh, Changduk Yang,
Tópico(s)Synthesis and properties of polymers
ResumoBy considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of ∼10 cm(2)/V·s is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor-acceptor (D-A) polymer semiconductor: poly(thienoisoindigo-alt-naphthalene) (PTIIG-Np). An unprecedented mobility of 14.4 cm(2)/V·s, by using PTIIG-Np with a high-k gate dielectric poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)), is achieved from a simple coating processing, which is of a magnitude that is very difficult to obtain with conventional TFTs by means of molecular engineering. This work, therefore, represents a major step toward truly viable plastic electronics.
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