Portal de Periódicos da CAPES

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

2009; Elsevier BV; Volume: 86; Issue: 7-9 Linguagem: Inglês

10.1016/j.mee.2009.03.020

1873-5568

Mario Lanza, M. Porti, M. Nafrı́a, X. Aymerich, Günther Benstetter, Edgar Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde, Paweł Piotr Michałowski,

Nanowire Synthesis and Applications

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.