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Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations

2014; Elsevier BV; Volume: 43; Linguagem: Inglês

10.1016/j.diamond.2014.01.009

1879-0062

Aurélien Maréchal, Nicolas Rouger, Jean-Christophe Crébier, Julien Pernot, Satoshi Koizumi, Tokuyuki Teraji, E. Gheeraert,

Electronic and Structural Properties of Oxides

In the view of predicting the performances as well as anticipating the architecture of the future diamond devices, it is of fundamental importance to accurately implement the physical properties of diamond into finite element based software. In this context, we used Silvaco to model a diamond p–n junction and studied the carrier densities responsible for the electrical characteristics of the devices. The simulated electrical characteristics are compared to experimental data and the influence of Shockley–Read–Hall and Auger recombination models on the carrier densities and J(V) characteristics was investigated. The bias voltage boundary between low and high injection conditions, Ψbi = 4.7 eV, was well reproduced. However, the extremely low calculated carrier densities lead to extremely low current densities in the low injection regime, reaching the numerical precision limit. The simulation of the reverse characteristic predicts a breakdown voltage of 225 V. Preliminary results on hopping conductivity implementation into the simulation tool are presented. Eventually, these results will be used to predict the architecture and behavior of future devices, such as bipolar junction transistor and metal–oxide–semiconductor field effect transistor.