Electron trapping effects in C- and Fe-doped GaN and AlGaN
2005; Elsevier BV; Volume: 49; Issue: 10 Linguagem: Inglês
10.1016/j.sse.2005.08.002
ISSN1879-2405
AutoresO. Lopatiuk, A. Osinsky, A. M. Dabiran, Konstantin Gartsman, Isai Feldman, Leonid Chernyak,
Tópico(s)Ga2O3 and related materials
ResumoIron- and carbon-doped GaN and iron-doped Al0.2Ga0.8N irradiated by low energy electron beam of scanning electron microscope were studied by cathodoluminescence and electron beam-induced current techniques. Irradiation is shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energies for irradiation-induced effects of 210, 230, and 360 meV for GaN:C, GaN:Fe, and Al0.2Ga0.8N:Fe, respectively. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels.
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