Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s
2011; Optica Publishing Group; Volume: 19; Issue: 27 Linguagem: Inglês
10.1364/oe.19.026936
ISSN1094-4087
AutoresGyungock Kim, Jeong‐Woo Park, In Gyoo Kim, Sang-Hoon Kim, Sang‐Gi Kim, Jong-Moo Lee, Gun Sik Park, Jiho Joo, Ki‐Seok Jang, Jin Hyuk Oh, Sun Ae Kim, Jong‐Hoon Kim, Jeong Yong Lee, Jong Moon Park, Kyung Hwan Kim, Deog‐Kyoon Jeong, Moon-Sang Hwang, Kim Jeong-Kyoum, Kyu-Sang Park, Hankyu Chi, Hyun‐Chang Kim, Dongwook Kim, Mu Hee Cho,
Tópico(s)Optical Network Technologies
ResumoWe present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.
Referência(s)