Raman spectra of the pentanary alloy semiconductor (Al x Ga1− x )1− z In z P y As1− y
1988; American Institute of Physics; Volume: 63; Issue: 6 Linguagem: Inglês
10.1063/1.341076
ISSN1520-8850
AutoresShūichi Emura, Shun‐ichi Gonda, Seiji Mukai,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoThe Raman scattering of (AlxGa1−x)1−zInzPyAs1−y (x<0.33, y<0.18) pentanary alloy semiconductor lattice matched to GaAs is investigated for the first time. Five Raman peaks are found in the composition range studied here, indicating that these materials display the multimode nature in the lattice mode character. The four peaks except the lowest one in frequency are assigned to InAs-, GaAs-, GaP-, and AlAs-like longitudinal optical modes, and the lowest one to disorder activated longitudinal acoustic modes. The other possible two modes, the InP- and AlP-like modes, could not be distinguished.
Referência(s)