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Optically detected cyclotron resonance of GaAs quantum wells: Effective-mass measurements and offset effects

1992; American Physical Society; Volume: 46; Issue: 20 Linguagem: Inglês

10.1103/physrevb.46.13394

1095-3795

R. J. Warburton, J. G. Michels, R. J. Nicholas, J. J. Harris, C. T. Foxon,

Advanced Chemical Physics Studies

We have detected cyclotron resonance in a series of undoped GaAs quantum wells by modulating the photoluminescence intensity with far-infrared radiation. The conduction-band mass was measured for different quantum-well widths, and good agreement with a simple formula based on k\ensuremath{\cdot}p theory is achieved. An offset was observed in the cyclotron-resonance energy, strongly dependent on well width. The interpretation is that monolayer-width fluctuations localize the carriers, giving an additional binding energy to the cyclotron-resonance transition.