Structure of amorphous carbon in amorphous C/Ge multilayers
1990; American Institute of Physics; Volume: 67; Issue: 4 Linguagem: Inglês
10.1063/1.345599
ISSN1520-8850
AutoresNicholas J. Long, H. J. Trodahl,
Tópico(s)Graphene research and applications
ResumoAmorphous C-Ge multilayers have been produced with periods varying from 2.6 to 12.5 nm. We have studied the multilayers using Raman spectroscopy and dc conductivity measurements and found that their properties change significantly when the carbon sublayer thickness is smaller than 2.5 nm. This value corresponds to the proposed dimension of sp2 bonded carbon islands within a-C and we find that our results can be understood in terms of the carbon forming these islands, but the islands becoming disconnected as the nominal carbon layer thickness decreases. The conductivity shows a percolation behavior for the thinnest layers.
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