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Cryogenic readout integrated circuits for submillimeter-wave camera

2006; Elsevier BV; Volume: 559; Issue: 2 Linguagem: Inglês

10.1016/j.nima.2005.12.150

1872-9576

H. Nagata, Jun Kobayashi, Hiroshi Matsuo, Makoto Akiba, Mikio Fujiwara,

Radio Frequency Integrated Circuit Design

The development of cryogenic readout circuits for Superconducting Tunneling Junction (STJ) direct detectors for submillimeter wave is presented. A SONY n-channel depletion-mode GaAs Junction Field Effect Transistor (JFET) is a candidate for circuit elements of the preamplifier. We measured electrical characteristics of the GaAs JFETs in the temperature range between 0.3 and 4.2 K, and found that the GaAs JFETs work with low power consumption of a few microwatts, and show good current-voltage characteristics without cryogenic anomalies such as kink phenomena or hysteresis behaviors. Furthermore, measurements at 0.3 K show that the input referred noise is as low as 0.6μV/Hz at 1 Hz. Based on these results and noise calculations, we estimate that a Capacitive Transimpedance Amplifier with the GaAs JFETs will have low noise and STJ detectors will operate below background noise limit.