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Z2-FET: A promising FDSOI device for ESD protection

2014; Elsevier BV; Volume: 97; Linguagem: Inglês

10.1016/j.sse.2014.04.032

1879-2405

Yohann Solaro, Jing Wan, P. Fonteneau, C. Fenouillet-Béranger, C. Le Royer, A. Zaslavsky, Philippe Ferrari, S. Cristoloveanu,

Integrated Circuits and Semiconductor Failure Analysis

In this work, the use of the Z2-FET (Zero subthreshold swing and Zero impact ionization FET) for Electro-Static Discharge (ESD) protections is demonstrated. The device, fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator technology, features an extremely sharp off-on switch and an adjustable triggering voltage (Vt1). The principle of operation, relying on the modulation of electron and hole injection barriers, is reviewed. The impact of process modules and design parameters on electrical characteristics is analyzed with TCAD simulations, showing that very low leakage current (Ileak) and triggering capability adapted to local protection schemes are achievable. Experimental results validate the possible use of this device as an ESD protection in the 28 nm FDSOI technology.