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Growth and Characterization of CuInS 2 Films grown by Rf Ion-Plating

1997; Institute of Physics; Volume: 36; Issue: 11R Linguagem: Inglês

10.1143/jjap.36.6668

1347-4065

Ken‐ichi Kondo, Susumu Nakamura, Hiroyuki Sano, Hiroshi Sato,

Quantum Dots Synthesis And Properties

Films of the chalcopyrite semiconductor C u I n S 2 were grown by rf ion-plating at a relatively low substrate temperature of 400° C, which allows us to use a large size inexpensive glass substrate, for various levels of substrate bias, ranging from +50 V to -50 V. The Cu and In compositions were controlled by varying the electron beam power of the Cu 2 S and In 2 S 3 sources. There were significant differences in the surface morphology and crystallinity between films prepared under either negatively biased or floating conditions and films prepared under either positively biased or grounded conditions. Single phase CuInS 2 films of good quality were obtained when the substrate was subjected to the floating conditions. Cu ions seem to play a very important role in the growth of Cu x S y which acts as an accelerator for growing good crystalline CuInS 2 at a relatively low temperature.