Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V2O5/V/V2O5 multi-layers for uncooled microbolometers
2003; Elsevier BV; Volume: 425; Issue: 1-2 Linguagem: Inglês
10.1016/s0040-6090(02)01263-4
ISSN1879-2731
AutoresYong-Hee Han, In-Hoon Choi, Ho-Kwan Kang, Jong‐Yeon Park, Kun-Tae Kim, Hyun‐Joon Shin, Sung Moon,
Tópico(s)Advanced Memory and Neural Computing
ResumoVanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance (TCR) at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having a high temperature coefficient of resistance and low resistance because of the process limits in microbolometer fabrication. We present a novel fabrication method for vanadium oxide thin films having good electrical properties. Through the formation of a sandwich structure of V2O5 (100 A)/V (∼80 A)/V2O5 (500 A) by a conventional sputter method and post-annealing at 300 °C in oxygen, a mixed phase of VOx is formed. The results show that the mixed phase formed by this process has a high TCR of more than −2%/°C and low resistivity of <0.1 Ω cm at room temperature.
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