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Ground state energy of an exciton bound to an ionized donor impurity in two dimensional semiconductors

1989; Elsevier BV; Volume: 5; Issue: 3 Linguagem: Inglês

10.1016/0749-6036(89)90331-5

1096-3677

B. Stébé, L. Stauffer,

Molecular Junctions and Nanostructures

The ground state energy of the (D+, X)-complex corresponding to an exciton bound to an ionized donor is calculated variationally for 2D semiconductors in the whole range of the electron to hole effective mass ratio. Using a 55-term Hylleraas type wave function, we found that the complex remains stable for mass ratios up to 0.88. This value is about two times larger than that, 0.36, we obtain with the same wave function in the 3D case. As a result, more favorable conditions for the detection of the (D+, X)-complex are realized in strictly 2D semiconductors and quantum well structures than in bulk materials.