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Field‐Aided Thermal Chemical Vapor Deposition of Copper Using Cu(I) Organometallic Precursor

1997; Institute of Physics; Volume: 144; Issue: 2 Linguagem: Inglês

10.1149/1.1837468

1945-7111

Won‐Jun Lee, Sa‐Kyun Rha, Seung‐Yun Lee, Chong‐Ook Park,

nanoparticles nucleation surface interactions

A dc substrate bias which is not enough to make a plasma was applied during the chemical vapor deposition of copper to change the adsorption behavior of the reactant. Copper films were deposited on TiN and from Cu(hfac)(tmvs) with and without the substrate bias. The surface morphology, the thickness, the sheet resistance, and the purity of the films were investigated. When a negative substrate bias of −30 V was applied to the substrate, the deposition rate of copper increased both on TiN and . The substrate bias did not cause the change in the chemical composition of the deposited copper film. It was calculated that Cu(hfac) has the dipole moment whose direction is from copper to hfac. The local electric fields due to surface roughness may affect the adsorption behavior of the precursor, especially the direction of the molecular dipole moment. Resulting from the overlapping population value analysis, the improvement of deposition rate under negative substrate bias was explained as due to the adsorption of the copper atom in the Cu(hfac) species directly onto the substrate by the local electric fields applied between the substrate and the gas showerhead.