Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy
2000; American Institute of Physics; Volume: 87; Issue: 9 Linguagem: Inglês
10.1063/1.373057
ISSN1520-8850
AutoresChang‐Da Tsai, Ching-Ting Lee,
Tópico(s)Electron and X-Ray Spectroscopy Techniques
ResumoWe present the passivation mechanism and the chemistry of an (NH4)2Sx treated (100) InGaP surface using x-ray photoelectron spectroscopy. The native oxide on the as-etched InGaP surface could be further removed by a suitable (NH4)2Sx-treatment process. The measured x-ray photoelectron spectra revealed that the S atoms, in addition to bonding to the elemental sulfur, also bonded with the In and Ga atoms on the (NH4)2Sx-treated InGaP surface. However, the S atoms occupied the phosphorous-related vacancies instead of bonding with the P atoms. A proposed structural model of a sulfur-passivated surface is then presented.
Referência(s)