Artigo Acesso aberto Revisado por pares

Polarimetric performance of Si/CdTe semiconductor Compton camera

2010; Elsevier BV; Volume: 622; Issue: 3 Linguagem: Inglês

10.1016/j.nima.2010.07.077

ISSN

1872-9576

Autores

Shin’ichiro Takeda, Hirokazu Odaka, J. Katsuta, S. Ishikawa, So-ichiro Sugimoto, Yuu Koseki, Shin Watanabe, Goro Sato, M. Kokubun, Tadayuki Takahashi, K. Nakazawa, Yasushi Fukazawa, H. Tajima, Hidenori Toyokawa,

Tópico(s)

Radiation Detection and Scintillator Technologies

Resumo

A Compton camera has been developed based on Si and CdTe semiconductor detectors with high spatial and spectral resolution for hard X- and γ‐ray astrophysics applications. A semiconductor Compton camera is also an excellent polarimeter due to its capability to precisely measure the Compton scattering azimuth angle, which is modulated by linear polarization. We assembled a prototype Compton camera and conducted a beam test using nearly 100% linearly polarized γ‐rays at SPring-8.

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