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Attenuation and velocity of 56 GHz longitudinal phonons in gallium arsenide from 50 to 300 K

1994; Taylor & Francis; Volume: 70; Issue: 3 Linguagem: Inglês

10.1080/01418639408240242

1463-6417

Wei Chen, Humphrey J. Maris, Z. R. Wasilewski, Shin-ichiro Tamura,

Acoustic Wave Resonator Technologies

Abstract We have used a novel method to measure the attenuation and velocity of 56 GHz longitudinal phonons in GaAs over the temperature range from 50 to 300 K. The sample was a molecular-beam-epitaxy-grown layer separated from the substrate by a GaAs/AlAs multilayer structure that acted as a resonant reflector for the phonons. We discuss the results in terms of theories of the phonon-phonon interaction.