Positive charge traps in silicon dioxide films: A comparison of population by X-rays and band-gap light
1975; Elsevier BV; Volume: 27; Issue: 1 Linguagem: Inglês
10.1016/0040-6090(75)90019-x
ISSN1879-2731
AutoresAndrew Holmes‐Siedle, I. Groombridge,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoFour types of thermally grown amorphous silicon dioxide films were irradiated with kilovolt X-rays and broad-band vacuum UV light (hv = 3−14 eV) under applied electric fields in the range 107–108 V m-1. The functional forms for the growth of X-ray- and VUV-induced space charge as a function of photon fluence and applied field, together with the annealing of charge by heat treatment or photo-injection, were the same for each form of radiation.
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