230 W C-band GaN-FET power amplifier
2007; Institution of Engineering and Technology; Volume: 43; Issue: 17 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresYasuhiro Okamoto, Tatsuo Nakayama, Yuji Ando, Akio Wakejima, K. Matsunaga, K. Ota, Hiroyuki Miyamoto,
Tópico(s)Advanced Power Amplifier Design
ResumoA C-band high-power amplifier with two GaN-based FET chips exhibits record output powers under continuous-wave (CW) and pulsed operation conditions. At 5.0 GHz, the developed GaN-FET amplifier delivers a CW 208 W output power with 11.9 dB linear gain and 34% power-added efficiency. It also shows a pulsed 232 W output power with 8.3 dB linear gain.
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