Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 μm large optical cavity structures
2001; Elsevier BV; Volume: 192; Issue: 1-2 Linguagem: Inglês
10.1016/s0030-4018(01)01147-6
ISSN1873-0310
AutoresR. Hülsewede, J. Sebastian, H. Wenzel, G. Beister, A. Knauer, G. Erbert,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoAbstract The beam quality of 800 nm AlGaAs/GaAsP broad-area (BA) laser diodes with large optical cavity (LOC) waveguide structures was studied under high power conditions. The LOC structures consist of a tensile-strained GaAsP single quantum well embedded in AlGaAs layers forming 1 and 2 μm thick waveguide cores. A low beam divergence of 51° respectively 46° (full width at 1/ e 2 maximum) is obtained in fast axis direction. BA diode lasers with 2 mm cavity length and stripe widths of 60, 100 and 200 μm show beam quality factors M 2 along the slow axis of about 12, 16 and 35 at 2 W output power, respectively. M 2 also weakly depends upon the waveguide width and is slightly smaller for the 2 μm waveguide core if the stripe width is less than 100 μm .
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