Effect of rare earth doping on sol-gel derived PZT thin films
2001; Taylor & Francis; Volume: 28; Issue: 3-4 Linguagem: Inglês
10.1080/07315170108202952
ISSN1563-5228
AutoresS. B. Majumder, P. S. Dobal, Biplab Roy, Seemesh Bhaskar, Ram S. Katiyar, A. S. Bhalla,
Tópico(s)Multiferroics and related materials
ResumoAbstract We have studied the effect of rare earth dopants (Nd, Gd and Ce) on the phase formation behavior and electrical properties of sol-gel derived Pb1.05(Zr0.53Ti0.47)O3 thin films. In all these films the perovskite phase is obtained up to 5 at% doping and beyond that pyrochlore phase was found to coexist with the perovskite phase. Ce and Gd doping(1-2 at%) exhibited improved ferroelectric and dielectric properties as compared to the undoped PZT films. Nd doping (2 at%) was found to be effective to increase the retained switchable polarization of undoped PZT from 63% to 84%. The transition temperature of undoped PZT film was found to be reduced with Nd doping. The Nd doped films also exhibited typical relaxor behavior and a diffuse phase transition, characteristic of the relaxor material. Introduction of Nd into the PZT lattice probably introduces disorder in the B site of ABO3 lattice which causes the observed relaxor behavior Key Words: PZTThin FilmRare Earth dopingSol-gelRaman scattering
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