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Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure

1991; American Physical Society; Volume: 66; Issue: 6 Linguagem: Inglês

10.1103/physrevlett.66.774

1092-0145

J. A. Wolk, Michael Krüger, James Heyman, W. Walukiewicz, Raymond Jeanloz, E. E. Haller,

Silicon Nanostructures and Photoluminescence

We report the observation of a local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the ${\mathrm{Si}}_{\mathrm{Ga}}$ shallow-donor LVM peak and is assigned to the Si DX center. The relative intensities of the Si DX LVM and the Si shallow-donor LVM peaks and photoquenching behavior of the sample are consistent with the appearance of a defect which binds two electrons as it undergoes a large lattice relaxation at approximately 23 kbar.