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Pore Formation on n-InP

2000; Wiley; Volume: 182; Issue: 1 Linguagem: Inglês

10.1002/1521-396x(200011)182

1521-396X

Patrik Schmuki, Lionel Santinacci, Thierry Djenizian, D. J. Lockwood,

Nanowire Synthesis and Applications

physica status solidi (a)Volume 182, Issue 1 p. 51-61 Original PaperFull Access Pore Formation on n-InP P. Schmuki, P. Schmuki Swiss Federal Institute of Technology, Department of Materials Science, LC-DMX, CH-1015 Lausanne, SwitzerlandSearch for more papers by this authorL. Santinacci, L. Santinacci Swiss Federal Institute of Technology, Department of Materials Science, LC-DMX, CH-1015 Lausanne, SwitzerlandSearch for more papers by this authorT. Djenizian, T. Djenizian Swiss Federal Institute of Technology, Department of Materials Science, LC-DMX, CH-1015 Lausanne, SwitzerlandSearch for more papers by this authorD.J. Lockwood, D.J. Lockwood Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A OR6Search for more papers by this author P. Schmuki, P. Schmuki Swiss Federal Institute of Technology, Department of Materials Science, LC-DMX, CH-1015 Lausanne, SwitzerlandSearch for more papers by this authorL. Santinacci, L. Santinacci Swiss Federal Institute of Technology, Department of Materials Science, LC-DMX, CH-1015 Lausanne, SwitzerlandSearch for more papers by this authorT. Djenizian, T. Djenizian Swiss Federal Institute of Technology, Department of Materials Science, LC-DMX, CH-1015 Lausanne, SwitzerlandSearch for more papers by this authorD.J. Lockwood, D.J. Lockwood Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A OR6Search for more papers by this author First published: 28 November 2000 https://doi.org/10.1002/1521-396X(200011)182:1 3.0.CO;2-SCitations: 34AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract The present work deals with localized dissolution processes of n-type InP(100). Pore growth can be electrochemically initiated on the n-type material in the dark in HCl, HBr and HF solutions and leads after extended polarization to the formation of a porous InP structure. The porous structures were characterized by SEM, AES, and PL measurements. The pore morphology depends strongly on the electrochemical conditions and the type of halogen acid present in the electrolyte. AES depth profiles show that the composition of the porous layer is strongly affected by the electrolyte. For all electrolytes depletion of In was observed; this effect is the strongest for HBr and the weakest for HF. Uptake of electrolyte anions is the highest for HBr and lowest for HF. From scratch experiments it is clear that the pore initiation process is strongly influenced by surface defects. The morphology of the dissolution process also strongly depends on illumination as assessed by an experiment using a laser beam for a local surface illumination. 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