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Flash evaporated layers of (Bi2Te3–Bi2Se3)(N) and (Bi2Te3–Sb2Te3)(P)

1998; Elsevier BV; Volume: 52; Issue: 2-3 Linguagem: Inglês

10.1016/s0921-5107(98)00108-1

1873-4944

A. Foucaran, A. Sackda, Alain Giani, F. Pascal‐Delannoy, Alexandre Boyer,

Semiconductor materials and devices

(Bi2Te3)0.9(Bi2Se3)0.1 for N-type material powder and (Bi2Te3)0.25(Sb2Te3)0.75 for P-type material powder were evaporated by a flash evaporation technique. We obtained a value of Z equal to 0.21×10−4 K−1 for α=40 μV K−1 and ρ=50 μΩ·m for P-type material and Z of about 0.17×10−3 K−1 for α=90 μV K−1 and ρ=30 μΩ·m for N-type material (at 300 K), for 1 μm layer thickness deposited over polyimide substrate, before annealing. We show that after annealing at 250°C under He atmosphere, the figure of merit of the layers increases to Z=3.2×10−3 K−1 for α=240 μV K−1 and ρ=12 μΩ·m for P-type material and Z=1.6×10−3K−1 for α=200 μV K−1 and ρ=15 μΩ·m for N-type material (at 300 K). With these fabrication parameters, we realised three different structures of micromodule Peltier (MMP) junction and we obtained a maximum value for temperature drop between hot and cold sides of ≈3.4 K. This result is very promising in order to develop MMP.