Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties
2003; American Institute of Physics; Volume: 93; Issue: 2 Linguagem: Inglês
10.1063/1.1524707
ISSN1520-8850
AutoresBillel Kalache, Andrey Kosarev, R. Vanderhaghen, Pere Roca i Cabarrocas,
Tópico(s)Semiconductor materials and devices
ResumoThe role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge is studied through the analysis of the structural properties of thick and thin films. Spectroscopic ellipsometry is shown to be a powerful technique to probe their in-depth structure. It allows to evidence a complex morphology consisting of an interface layer, a bulk layer, and a subsurface layer. The ion energy has been tuned by codepositing series of samples on the grounded electrode and on the powered electrode, as functions of pressure and power. On the one hand, reducing the ion energy through the increase of the total pressure and depositing on the grounded electrode, favors the formation of large grains and results in improved bulk transport properties, but leaves an amorphous interface layer with the substrate. On the other hand, we achieve fully crystallized films on glass substrates under conditions of high energy ion bombardment. We suggest that ion bombardment, and particularly the implantation of hydrogen ions, favors the formation of a porous layer where the nucleation of crystallites takes place. These results are further supported by in situ spectroscopic ellipsometry measurements of the film morphology as a function of the ion energy.
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