Thickness Dependence of the Ground-State Exciton Energy in W Se 2
1971; American Physical Society; Volume: 4; Issue: 6 Linguagem: Inglês
10.1103/physrevb.4.2069
ISSN0556-2805
Autores Tópico(s)Organic and Molecular Conductors Research
ResumoA theory developed for a thin anisotropic semiconductor, where the exciton is treated in the effective-mass approximation and where the effect of crystal surfaces is included by means of image-charge potentials, is applied to crystals of thickness less than 500 \AA{}. The theory leads to an exciton ground-state energy which closely approaches an inverse-square-law dependence on thickness. By the use of estimates of the dielectric and reduced-exciton-mass components quantitative agreement with data on W${\mathrm{Se}}_{2}$ is obtained.
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