Growth of epitaxial Ag/Si films by the partially ionized beam deposition technique
1991; American Institute of Physics; Volume: 69; Issue: 2 Linguagem: Inglês
10.1063/1.347363
ISSN1520-8850
AutoresT. C. Nason, Lü You, Guanghui Yang, Tianlin Lu,
Tópico(s)Electron and X-Ray Spectroscopy Techniques
ResumoThe observation of room-temperature epitaxy of vapor-deposited thin Ag films on Si(111) accomplished under conventional vacuum conditions is reported. Epitaxy was also observed at 350 °C. The films were deposited using a partially ionized beam deposition system, and were typically 1500 Å thick. Epitaxy was confirmed via pole-figure analysis. Scanning electron microscopy revealed excellent surface flatness even for the room-temperature films. Contrary to previous observations, the growth was found to proceed by the layer mode, even at the elevated temperature. This change in morphology is attributed to the enhanced density of nucleation sites due to the energetic ions.
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