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Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature

2008; Elsevier BV; Volume: 255; Issue: 5 Linguagem: Inglês

10.1016/j.apsusc.2008.06.190

1873-5584

Gaurav Shukla, Alika Khare,

ZnO doping and properties

In this paper, dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser ablation of Al target in the environment of N2 at room temperature is reported. The films were analyzed with AFM, SEM, XRD and FTIR for crystal structure and surface morphology. At higher N2 pressure, the orientation of AlN is (1 0 1) whereas at lower pressure (0 0 2) orientation was observed. The dependence of PL spectra of pulsed laser deposited AlN thin films on to the crystal structure and deposition time is reported. The effect of N2 pressure on FTIR spectra of AlN thin film is also reported in the paper.