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Single-frequency high-power continuous-wave oscillation at 1003 nm of an optically pumped semiconductor laser

2006; SPIE; Volume: 6184; Linguagem: Inglês

10.1117/12.662931

1996-756X

Mathieu Jacquemet, M. Domenech, J. Dion, M. Strassner, G. Lucas-Leclin, Patrick Georges, I. Sagnes, A. Garnache,

Advanced Fiber Laser Technologies

This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.