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An optically controlled closing and opening semiconductor switch

1988; American Institute of Physics; Volume: 63; Issue: 7 Linguagem: Inglês

10.1063/1.341022

1520-8850

Karl H. Schoenbach, V.K. Lakdawala, R. Germer, S. T. Ko,

Plasma Diagnostics and Applications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.