Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
2013; American Institute of Physics; Volume: 103; Issue: 12 Linguagem: Inglês
10.1063/1.4821858
ISSN1520-8842
AutoresMasataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura, Man Hoi Wong, Daivasigamani Krishnamurthy, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoSingle-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors were fabricated on a semi-insulating β-Ga2O3 (010) substrate. A Sn-doped n-Ga2O3 channel layer was grown by molecular-beam epitaxy. Si-ion implantation doping was performed to source and drain electrode regions for obtaining low-resistance ohmic contacts. An Al2O3 gate dielectric film formed by atomic layer deposition passivated the device surface and significantly reduced gate leakage. The device with a gate length of 2 μm showed effective gate modulation of the drain current with an extremely low off-state drain leakage of less than a few pA/mm, leading to a high drain current on/off ratio of over ten orders of magnitude. A three-terminal off-state breakdown voltage of 370 V was achieved. Stable transistor operation was sustained at temperatures up to 250 °C.
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